Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121535
Reference22 articles.
1. Trap‐limited interstitial diffusion and enhanced boron clustering in silicon
2. Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities
3. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
4. MeV-energy B+, P+ and As+ ion implantation into Si
5. A systematic analysis of defects in ion-implanted silicon
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