Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4899197
Reference18 articles.
1. InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies
2. Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors
3. The effect of surface recombination on current in AlxGa1−xAs heterojunctions
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3. Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers;Japanese Journal of Applied Physics;2017-06-19
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