Two-zone SiGe base heterojunction bipolar charge plasma transistor for next generation analog and RF applications

Author:

Bramhane Lokesh Kumar,Singh Jawar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. On the performance and scaling of symmetric lateral bipolar transistors on SOI;Ning;IEEE J. Electron Devices Soc.,2013

2. Complimentary Thin-Base symmetric lateral bipolar transistor on SOI;Cai;Electron Devices Meet. (IEDM),2011

3. Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors;Chiang;J. Appl. Phys.,2014

4. Design of a 250-Gbit/s SiGe HBT electrooptic modulator;Guha Neogi;IEEE Photonic J.,2011

5. On the performance of lateral SiGe heterojunction bipolar transistors with partially depleted base;Raman;IEEE Trans. Electron Devices,2015

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