Double‐crystal x‐ray diffraction from Si1−xGex/Si superlattices: Quantification of peak broadening effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101293
Reference10 articles.
1. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
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3. Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system
4. Resonant tunneling in Si/Si1−xGexdouble‐barrier structures
5. Effect of buffer-layer composition on new optical transitions in Si/Ge short-period superlattices
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