Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126668
Reference22 articles.
1. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. 1.3 μm room-temperature GaAs-based quantum-dot laser
4. Novel prospects for self-assembled InAs/GaAs quantum boxes
5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
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3. An explanation for the non-monotonic temperature dependence of the photoluminescence spectral features of self-organized InAs QDs;Journal of Luminescence;2023-01
4. Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect;Applied Surface Science;2022-03
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