Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect-Reference-Cited by-同舟云学术

Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

Published:2022-03 Issue: Volume:578 Page:152066
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Xiaohui,Liu Jingtao,Liang Baolai,Wang Ying,Guo Yingnan,Wang Chunsheng,Wang Shufang,Fu Guangsheng,Mazur Yuriy I.,Maidaniuk Yurii,Ware Morgan E.,Salamo Gregory J.

Funder

Natural Science Foundation of Hebei Province

Hebei University

Cardiff University

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference39 articles.

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3. Tuning quantum dot luminescence below the bulk band gap using tensile strain;Simmonds;ACS Nano.,2013

4. Improved performance of 1.3µm InAs/GaAs quantum dot lasers by direct Si doping;Lv;Appl. Phys. Lett.,2018

5. Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots;Ferdos;Appl. Phys. Lett.,2002

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