Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping-Reference-Cited by-同舟云学术

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Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping

Published:2018-07-02 Issue:1 Volume:113 Page:011105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lv Zun-Ren¹²,Zhang Zhong-Kai¹²,Yang Xiao-Guang¹²,Yang Tao¹²

Affiliation:

1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026809

Reference15 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Device characteristics of long-wavelength lasers based on self-organized quantum dots

3. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

4. Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed

5. Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

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1. 1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation;Advanced Physics Research;2024-08-06

2. High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser;Optics Letters;2024-03-04

3. High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers;Laser & Photonics Reviews;2023-06-29

4. Significantly enhanced performance of InAs/GaAs quantum dot lasers on Si(001) via spatially separated co-doping;Optics Express;2023-06-01

5. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A;Journal of Applied Physics;2022-11-14

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