Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements-Reference-Cited by-同舟云学术

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

Published:2017-01-21 Issue:3 Volume:121 Page:035701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reklaitis I.¹^ORCID,Nippert F.²^ORCID,Kudžma R.¹,Malinauskas T.¹,Karpov S.³^ORCID,Pietzonka I.⁴,Lugauer H. J.⁴^ORCID,Strassburg M.⁴,Vitta P.¹,Tomašiūnas R.¹,Hoffmann A.²

Affiliation:

1. Institute of Applied Research, Vilnius University, Saulėtekio 10, LT-10223 Vilnius, Lithuania

2. Institut für Festkörperphysik, Technische Universität Berlin, Handenbergstraße 36, 10623 Berlin, Germany

3. STR Group Soft-Impact Ltd., P.O. Box 83, 27 Engels av., 194156 St. Petersburg, Russia

4. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, D-93055 Regensburg, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973903

Reference24 articles.

1. Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

2. Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation

3. Time-resolved photoluminescence measurements of InGaN light-emitting diodes

4. Luminescence properties of defects in GaN

5. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

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