Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Minority‐carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells
2. Exciton lifetimes in GaN and GaInN
3. Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy
4. Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
5. Recombination dynamics of localized excitons in cubic In[sub x]Ga[sub 1−x]N/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
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