Minority‐carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100902
Reference13 articles.
1. Recombination Enhancement due to Carrier Localization in Quantum Well Structures
2. Localization induced electron‐hole transition rate enhancement in GaAs quantum wells
3. Picosecond time-resolved study of excitons in GaAs-A1As multi-quantum-well structures
4. Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well Structure
5. Low Interface Recombination Velocity in GaAs-(Al, Ga)As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy
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3. Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes;Quantum Electronics;2019-06-01
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