Reduction of Be out‐diffusion from heavily doped GaAs:Be layers by pseudomorphic InxGa1−xAs barrier layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112187
Reference4 articles.
1. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy
2. Control of Be diffusion in molecular beam epitaxy GaAs
3. Control of Be diffusion in AlInAs/GaInAs heterostructure bipolar transistors through use of low-temperature GaInAs
4. Suppression of defect propagation in semiconductors by pseudomorphic layers
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1. Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs;physica status solidi (b);2006-10
2. The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors;Journal of Electronic Materials;2002-08
3. Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy;Materials Science and Engineering: B;2000-02
4. Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces;Materials Science and Engineering: B;1999-12
5. Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy;Europhysics Letters (EPL);1999-02-01
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