Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3700720
Reference26 articles.
1. Highly efficient THz emission from differently grown InN at 800nm and 1060nm excitation
2. InN: A material with photovoltaic promise and challenges
3. Influence of band structure and intrinsic carrier concentration on the THz surface emission from InN and InAs
4. Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
5. Optical band gap of indium nitride
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