Influence of band structure and intrinsic carrier concentration on the THz surface emission from InN and InAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Polarity reversal of terahertz waves radiated from semi-insulating InP surfaces induced by temperature
2. Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics
3. THz electromagnetic emission by coherent infrared-active phonons
4. Study of terahertz radiation from InAs and InSb
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1. Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers;Journal of Materials Science: Materials in Electronics;2023-02
2. Laser THz emission nanoscopy and THz nanoscopy;Optics Express;2020-06-09
3. Spectral dependence of THz emission from InN and InGaN layers;Scientific Reports;2019-05-08
4. Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation;Thin Solid Films;2018-02
5. Nanoscale Laser Terahertz Emission Microscopy;ACS Photonics;2017-10-16
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