Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809759
Reference20 articles.
1. Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys
2. Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
3. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
4. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
5. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
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