Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3675451
Reference15 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
3. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
4. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
5. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
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