Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4789603
Reference27 articles.
1. Gallium antisite defect and residual acceptors in undoped GaSb
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4. Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy
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2. Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies;Journal of Computational Electronics;2018-02-26
3. Surface reconstruction: An effective method for the growth of mismatched materials;Applied Surface Science;2016-01
4. Electrical characterization of a buried GaSb p-n junction controlled by native defects;Crystal Research and Technology;2014-06-30
5. Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures;Journal of Applied Physics;2013-10-07
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