Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy-Reference-Cited by-同舟云学术

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Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

Published:1995-05 Issue: Volume:150 Page:844-848
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bosacchi A.,Franchi S.,Allegri P.,Avanzini V.,Baraldi A.,Ghezzi C.,Magnanini R.,Parisini A.,Tarricone L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Gallium antimonide device related properties

2. High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm

3. Observation of normal-incidence intersubband absorption inn-typeAl0.09Ga0.91Sb quantum wells

4. Growth properties of GaSb: The structure of the residual acceptor centres

5. Defects and Radiation Effects in Semiconductors 1978;Allegre,1978

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1. Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate;Infrared Physics & Technology;2018-05

2. Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties;Journal of Applied Physics;2014-07-21

3. Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures;Journal of Applied Physics;2013-10-07

4. Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures;Journal of Applied Physics;2013-01-28

5. Negative magnetoresistance effects in metallic n-type GaSb;Journal of Applied Physics;2007-09-15

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