Surface reconstruction: An effective method for the growth of mismatched materials-Reference-Cited by-同舟云学术

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Surface reconstruction: An effective method for the growth of mismatched materials

Published:2016-01 Issue: Volume:360 Page:547-552
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sun Yu,Zheng Beining,Wu Xiaofeng,Yuan Long,Wu Jie,Guo Hongping,Huang Keke,Feng Shouhua

Funder

National Natural Science Foundation of China

Specialized Research Fund for the Doctoral Program of Higher Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Semiconductors and their applications;Grattidge;Nature,1984

2. Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111);Hestroffer;Phys. Rev. B,2011

3. Overview no. 61 on geometric criteria for low interfacial energy;Sutton;Acta Metall.,1987

4. Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation;Trampert;Physica E: Low-dimens. Syst. Nanostruc.,2002

5. Epitaxial interfaces between crystallographically mismatched materials;Erwin;Phys. Rev. Lett.,2011

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