Diffusion of ion beam created vacancies and their effect on intermixing: A gambler’s ruin approach
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357462
Reference12 articles.
1. Disorder of an AlAs‐GaAs superlattice by silicon implantation
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4. Mechanism of Ga Implantation-Induced Intermixing of GaAs-AlGaAs Material
5. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
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1. Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance;physica status solidi (a);2009-03-12
2. GaAs/AlGaAs quantum well intermixing using high-density argon plasma;Semiconductor Science and Technology;2005-01-21
3. The time evolution of interdiffusion in multiple quantum wells: a new model of impurity-induced compositional intermixing;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling;IEEE Journal of Selected Topics in Quantum Electronics;1998
5. Quantitative model for the kinetics of compositional intermixing in GaAs-AlGaAs quantum-confined heterostructures;IEEE Journal of Selected Topics in Quantum Electronics;1998
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