GaAs/AlGaAs quantum well intermixing using high-density argon plasma
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Quantum well intermixing
2. Enhanced compositional disordering of quantum wells in GaAs/AlGaAs and InGaAs/GaAs using focused Ga+ion beams
3. Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing
4. Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation
5. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering;Solid-State Electronics;2013-11
2. Quantum Dash Intermixing;IEEE Journal of Selected Topics in Quantum Electronics;2008
3. Postgrowth wavelength engineering of InAs/InAlGaAs/InP quantum-dash-in-well lasers;SPIE Proceedings;2007-02-08
4. Improving crystal quality of InGaAs∕GaAs quantum dots by inductively coupled Ar plasma;Applied Physics Letters;2006-06-19
5. Quantum-well Intermixing using Ge-doped Sol-gel Derived Silica Encapsulant Layer;MRS Proceedings;2005
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