Mixing of GaAs/(Ga,Al)As interfaces by Ga+implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349554
Reference42 articles.
1. Disorder of an AlAs‐GaAs superlattice by silicon implantation
2. Implantation disordering of AlxGa1−xAs superlattices
3. Defect structure and intermixing of ion‐implanted AlxGa1−xAs/GaAs superlattices
4. Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
5. Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
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1. Study of intermixing in InGaAs∕(Al)GaAs quantum well and quantum dot structures for optoelectronic∕photonic integration;IEE Proceedings - Circuits, Devices and Systems;2005
2. Opto-Electronic Components for Space;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
3. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells;Journal of Applied Physics;1999-12
4. Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces;Materials Science and Engineering: B;1997-02
5. Chapter 7 Ion Implantation into Quantum-Well Structures;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
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