Direct electron spin resonance determination of dangling bond energies in rf sputtered hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97347
Reference19 articles.
1. Electron Spin Resonance of Doped Glow-Discharge Amorphous Silicon
2. The correlation energy of the dangling silicon bond in a Si:H
3. Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds
4. Temperature modulated-SCLC, used for the study of the light induced, metastable density of states of a-Si:H
5. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
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1. Electronic structure of dangling bonds in amorphous silicon studied via a density-matrix functional method;Physical Review B;2002-11-21
2. Temperature Dependence of the Photoconductivity in p-Type a—Si:H;physica status solidi (b);1991-11-01
3. Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams;Philosophical Magazine B;1991-02
4. The doping of hydrogenated amorphous silicon and its impact on devices;Critical Reviews in Solid State and Materials Sciences;1990-01
5. Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies;Physical Review B;1989-03-15
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