Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.54.1844/fulltext
Reference25 articles.
1. Electronic Structure of Amorphous Semiconductors
2. DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON
3. Optical Absorption in Polyacetylene: A Direct Measurement Using Photothermal Deflection Spectroscopy
4. The correlation energy of the dangling silicon bond in a Si:H
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