Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710303
Reference14 articles.
1. Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
2. Unintentionally doped n-type Al0.67Ga0.33N epilayers
3. Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N
4. Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)
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