A pressure dependence model for the band gap energy of the dilute nitride GaNP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893017
Reference29 articles.
1. From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
2. Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys
3. Temperature and Composition Dependence of GaN x As 1−x (0
4. Band parameters for nitrogen-containing semiconductors
5. Nature of the fundamental band gap in GaNxP1−x alloys
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1. Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y;Materials Science-Poland;2020-06-01
2. A Numerical Investigation on the Effects of Water Vapor on Electron Energy and OH Production in Atmospheric-Pressure He/H2O and Ar/H2O Plasma Jets;IEEE Transactions on Plasma Science;2019-03
3. Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x;Materials Science-Poland;2016-12-01
4. The band gap energy of the Se-rich ZnOxSe1−x depending on composition as well as pressure;Physica B: Condensed Matter;2016-12
5. A model describing the pressure dependence of the band gap energy for the group III–V semiconductors;Physica B: Condensed Matter;2016-08
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