Almost pinning-free bismuth/Ge and /Si interfaces
Author:
Affiliation:
1. Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo 113-8656, Tokyo, Japan
Funder
Harmonic Ito Foundation
Japan Society for the Promotion of Science
Core Research for Evolutional Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5115535
Reference23 articles.
1. Surface States and Barrier Height of Metal‐Semiconductor Systems
2. Chemical trends of barrier heights in metal-semiconductor contacts: on the theory of the slope parameter
3. Formation of an electric dipole at metal-semiconductor interfaces
4. New and unified model for Schottky barrier and III–V insulator interface states formation
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