Reduction of recombination‐enhanced diffusion of Be in InGaAs strained layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107579
Reference10 articles.
1. Rapid zinc diffusion in gallium arsenide
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3. Physical basis of noncatastrophic degradation in GaAs injection lasers
4. DEGRADATION AND PASSIVATION OF GaP LIGHT‐EMITTING DIODES
5. Recombination‐enhanced impurity diffusion in Be‐doped GaAs
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1. Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures;Journal of Crystal Growth;2003-05
2. Failure mechanisms in compound semiconductor electron devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces;Materials Science and Engineering: B;1999-12
4. Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy;Europhysics Letters (EPL);1999-02-01
5. A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy;Journal of Physics D: Applied Physics;1998-12-21
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