Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Published:2016-11-28 Issue:22 Volume:109 Page:221106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Minj A.¹,Romero M. F.²,Wang Y.¹,Tuna Ö.³,Feneberg M.⁴^ORCID,Goldhahn R.⁴^ORCID,Schmerber G.⁵,Ruterana P.¹,Giesen C.³,Heuken M.³

Affiliation:

1. CIMAP, CNRS UMR 6252, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France

2. Instituto de Sistemas Optoelectrónicos y Microtecnología and Dpto. de Ingeniería Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Avda. Complutense 30, Ciudad Universitaria, 28040 Madrid, Spain

3. AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Germany

4. Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

5. Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, BP 43, 67034-Strasbourg Cedex 2, France

Funder

Juan de la Cierva-Incorporacion program (Spain)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4968799

Reference33 articles.

1. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

2. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

3. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

4. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

5. Theory of laser gain in group‐III nitrides

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