Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3514249
Reference23 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
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3. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature
4. 69.2: Highly Reliable Oxide-Semiconductor TFT for AM-OLED Display
5. 76.3: 32-inch LCD Panel Using Amorphous Indium-Gallium-Zinc-Oxide TFTs
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