Effect of Back-Channel Surface on Reliability of Solution-Processed In0.51Ga0.15Zn0.34O Thin-Film Transistors with Thin Active Layer-Reference-Cited by-同舟云学术

Effect of Back-Channel Surface on Reliability of Solution-Processed In_0.51Ga_0.15Zn_0.34O Thin-Film Transistors with Thin Active Layer

Published:2022-12-08 Issue:50 Volume:14 Page:55821-55827
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Im Hwarim¹^ORCID,Ahn Jeong Hyun¹,Kim Yong-Sang¹^ORCID,Hong Yongtaek²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon16419, South Korea

2. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul151-742, South Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c18393

Reference21 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

3. Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis

4. Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

5. Effect of Charge Trapping∕Detrapping on Threshold Voltage Shift of IGZO TFTs under AC Bias Stress

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