High‐quality GaAs layers on Si substrates grown by the hybrid method combining molecular‐beam and liquid phase epitaxies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347707
Reference13 articles.
1. GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
2. Optical properties of GaAs on (100) Si using molecular beam epitaxy
3. GaAs Shallow-homojunction solar cells on Ge-coated Si substrates
4. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
5. Characteristics of GaAs/AlGaAs heterostructures grown by liquid‐phase epitaxy on molecular‐beam‐coated GaAs on Si
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1. Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic–photoelectrolysis cells;Journal of Crystal Growth;2001-05
2. Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates;Applied Physics Letters;1995-05-08
3. Investigation of GaAs growth from Bi-based melts for solar cells;Journal of Crystal Growth;1995-01
4. Prevention of substrate melt-back by Se addition during liquid phase epitaxial growth of GaAs on GaAs-coated Si;Materials Letters;1994-08
5. Hybrid molecular beam epitaxy/low-temperature liquid phase epitaxy growth of GaAs (AlGaAs) layers on Si;Journal of Crystal Growth;1994-08
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