Radiative and Auger recombination in 1.3μm InGaAsP and 1.5μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1772871
Reference18 articles.
1. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination
2. Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum‐well lasers
3. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption
4. Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers
5. Temperature dependence of long wavelength semiconductor lasers
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