Author:
Yang Xin-Rong ,Xu Bo ,Zhao Guo-Qing ,Shen Xiao-Zhi ,Shi Shu-Hui ,Li Jie ,Wang Zhan-Guo , ,
Abstract
The long-wavelength laser on InP (001) is fabricated, the temperature dependence of threshold current density is investigated. The nomalous decrescence of threshold current density is observed with the increase of temperature, which leads to a negative characteristic temperature. The origin of this phenomenon is discussed. We attribute the anomalous temperature dependence of threshold current density to the carrier redistribution effect.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy