Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1366648
Reference11 articles.
1. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
2. Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys
3. Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices
4. Interface quality and electron transfer at the GaInP on GaAs heterojunction
5. Interface control and band offset at the Ga[sub 0.52]In[sub 0.48]P on GaAs heterojunction
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1. (Photo-)electrochemical reactions on semiconductor surfaces, part B: III-V surfaces–atomic and electronic structure;Encyclopedia of Solid-Liquid Interfaces;2024
2. Analysis of the optical and structural properties of oxide films on InP using spectroscopic ellipsometry;Technical Physics;2013-11
3. Influence of gate thermal oxide layer on InGaP/InGaAs doping-channel field-effect transistors;Materials Chemistry and Physics;2012-03
4. InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric;IEEE Electron Device Letters;2005-12
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