Optical investigation of organometallic vapor phase epitaxially grown AlxGa1−xP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342061
Reference16 articles.
1. (GaAl)P optical‐waveguide modulators fabricated by liquid‐phase epitaxy
2. Recent Advances in Gallium Phosphide Junction Devices for High-Temperature Electronic Applications
3. GaP/AlxGa1−xP heterojunction transistors for high‐temperature electronic applications
4. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
5. MO-CVD growth of GaP and GaAlP
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1. Growth of wurtzite AlxGa1−xP nanowire shells and characterization by Raman spectroscopy;Nanotechnology;2016-12-14
2. Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga1-xAlxP in Amorphous and Crystalline Phases;Acta Physica Polonica A;2015-06
3. Structural and Optical Investigations of Heterostructures Based on AlxGa1-xAsyP1-y:Si Solid Solutions Obtained by MOCVD;Physics Research International;2014-07-23
4. Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys;Semiconductors;2014-01
5. (Si)5−2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units;Applied Physics Letters;2012-01-09
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