(Si)5−2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units-Reference-Cited by-同舟云学术

(Si)5−2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units

Published:2012-01-09 Issue:2 Volume:100 Page:022101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Watkins T.,Jiang L.,Xu C.,Chizmeshya A. V. G.,Smith D. J.,Menéndez J.,Kouvetakis J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3675444

Reference8 articles.

2. Nanosynthesis Routes to New Tetrahedral Crystalline Solids: Silicon-like Si3AlP

3. Characterization of Bulk Semiconductors Using Raman Spectroscopy

4. Carbon dependence of Raman mode frequencies inSi1−x−yGexCyalloys

5. A. Onton, in Proceedings of the 10th International Conference on the Physics of Semiconductors, Cambridge, MA (U.S. Atomic Energy Commission, 1970), pp. 107–112.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct band gap AlPSi3 and GaPSi3 for tandem solar cells;Journal of Power Sources;2022-03

2. Structural, electronic and optical properties of nano-structural BNC3 alloys;Carbon;2021-05

3. Reducing postharvest food losses in organic spinach with the implementation of high tunnel production systems;Agronomy for Sustainable Development;2020-10-28

4. Effects of lemongrass oil application and modified atmosphere packaging on the postharvest life and quality of strawberry fruits;Scientia Horticulturae;2019-10

5. Synthesis and Structural and Optical Properties of Ga(As1–xPx)Ge3 and (GaP)yGe5–2y Semiconductors Using Interface-Engineered Group IV Platforms;ACS Applied Materials & Interfaces;2017-09-26