Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813391
Reference27 articles.
1. Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
2. Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes
3. Reduced injection current induced blueshift in an InGaN∕GaN quantum-well light-emitting diode of prestrained growth
4. Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
5. Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates
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1. Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers;Applied Physics Reviews;2020-12
2. Semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent;Applied Physics Express;2020-08-14
3. Optical polarization properties of (11–22) semi-polar InGaN LEDs with a wide spectral range;Scientific Reports;2020-04-28
4. Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes;Laser & Optoelectronics Progress;2019
5. A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges;physica status solidi (a);2018-12-27
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