Single-crystalline CuO nanowires for resistive random access memory applications
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919102
Reference23 articles.
1. Who Wins the Nonvolatile Memory Race?
2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
4. In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories
5. Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
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