Observation of laser emission in an InP‐AlInAs type II superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106760
Reference6 articles.
1. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification
2. Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
3. Investigations of MOCVD-grown AlInAs-InP type II heterostructures
4. Optical selection rules in superlattices in the envelope-function approximation
5. Theory of electroabsorption by anisotropic and layered semiconductors. I. Two-dimensional excitons in a uniform electric field
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1. Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well;Applied Physics Letters;2007-06-25
2. Light-heavy hole mixing and in-plane optical anisotropy ofInP−AlxIn1−xAstype-II multiquantum wells;Physical Review B;2000-03-15
3. Structural dependence of optical bistability of In0.52Al0.48As/InP type II MQW diodes grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1998-06
4. Below-gap light emission from type II heterointerface of In0.52Al0.48As/InP system grown on (111)B and (100) InP substrates;Applied Surface Science;1998-06
5. Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence;Applied Physics Letters;1998-03-30
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