Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121132
Reference10 articles.
1. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification
2. Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
3. Observation of laser emission in an InP‐AlInAs type II superlattice
4. Carrier dynamics in staggered‐band lineupn‐InAlAs/n‐InP heterostructures
5. Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
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1. Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy;Journal of Luminescence;2022-09
2. Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy;Journal of Applied Physics;2015-06-07
3. Tunable filters using AlGaAsSb/AlGaInAs type-II quantum wells;SPIE Proceedings;2004-06-14
4. Reducing crosstalk and signal distortion in wavelength-division multiplexing by increasing carrier lifetimes in semiconductor optical amplifiers;Journal of Lightwave Technology;2003-06
5. Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power;Applied Physics Letters;2002-04-15
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