Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1468920
Reference10 articles.
1. Short-pulse and high-frequency signal generation in semiconductor lasers
2. Fast phenomena in semiconductor lasers
3. High average power short-pulse generation from singlemode InGaAs/GaAs laser diodes
4. Near-transform-limited picosecond pulses from a gain-switched InGaAs diode laser with fiber Bragg gratings
5. Above-room-temperature optically pumped midinfrared W lasers
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3. Modelling of experimentally measured Q-switched pulsations in InGaAs/GaAs diode lasers;Optics Communications;2006-10
4. Evidence of strong phonon-assisted resonant intervalley up-transfer for electrons in type-II GaAs-AlAs Superlattices;IEEE Journal of Quantum Electronics;2005-03
5. On the design and analysis of AlInAs/AlGaInAs/AlGaAsSb type-II heterostructures for telecommunication applications;Superlattices and Microstructures;2004-01
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