Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well-Reference-Cited by-同舟云学术

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Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well

Published:2007-06-25 Issue:26 Volume:90 Page:261115
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tatebayashi J.,Khoshakhlagh A.,Huang S. H.,Balakrishnan G.,Dawson L. R.,Huffaker D. L.,Bussian D. A.,Htoon H.,Klimov V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2752018

Reference21 articles.

1. Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices

2. Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selection

3. Multidimensional quantum well laser and temperature dependence of its threshold current

4. Type‐II quantum‐well lasers for the mid‐wavelength infrared

5. Radiative recombination in type‐II GaSb/GaAs quantum dots

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4. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well;Optical and Quantum Electronics;2020-06

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