Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications-Reference-Cited by-同舟云学术

Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications

Published:2019-10-14 Issue:14 Volume:126 Page:145105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Uchida Noriyuki¹^ORCID,Hattori Junichi¹^ORCID,Lieten Ruben R.²³,Ohishi Yuji⁴^ORCID,Takase Ryohei⁵,Ishimaru Manabu⁵,Fukuda Koichi¹,Maeda Tatsuro¹,Locquet Jean-Pierre³

Affiliation:

1. Nanoelectronics Research Institute, Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

2. IMEC, 3001 Leuven, Belgium

3. Department of Physics and Astronomy, KU Leuven, 3001 Leuven, Belgium

4. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

5. Department of Materials Science and Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Fukuoka 804-8550, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5085470

Reference28 articles.

1. Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3gate dielectrics

2. Self-heating effects in polycrystalline silicon thin film transistors

3. Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors

4. Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors

5. Self-heating enhanced charge trapping effect for InGaZnO thin film transistor

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