Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4705472
Reference20 articles.
1. Submicron super TFTs for 3-D VLSI applications
2. Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
3. Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
4. Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $\hbox{La}_{2}\hbox{O}_{3}/\hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High-$\kappa$ Dielectrics and Si Channel
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3. P‐11: Effects of Ar Dilution on N 2 O/SiH 4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics;SID Symposium Digest of Technical Papers;2022-06
4. Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-04
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