Impact of Scaling of Dielectric Thickness on Subthreshold Slope in Top-Contact Pentacene Organic Thin Film Transistors-Reference-Cited by-同舟云学术

Impact of Scaling of Dielectric Thickness on Subthreshold Slope in Top-Contact Pentacene Organic Thin Film Transistors

Published:2023-05 Issue:5 Volume:70 Page:2460-2464
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rajput Praveena¹^ORCID,Kumar Hitesh¹^ORCID,Singh Vinay Kumar²

Affiliation:

1. Department of Electronics and Communication, Guru Ghasidas University, Bilaspur, Chhattisgarh, India

2. Department of Electronics and Telecommunication, Government Engineering College, Jagdalpur, Chhattisgarh, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10091836.pdf?arnumber=10091836

Reference23 articles.

1. Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3gate dielectrics

2. Impact of scaling of dielectric thickness on mobility in top-contact pentacene organic thin film transistors

3. Influence of polymer gate dielectric on organic field-effect transistors: Interdependence of molecular weight, solvent polarity, and surface energy—A case study with PMMA and pentacene;rajeev;Macromol Mater Eng,2022

4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

5. High-Performance Poly-Silicon TFTs Using a High-$k$ $\hbox{PrTiO}_{3}$ Gate Dielectric

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