Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3507891
Reference17 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
3. A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes
4. Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths
5. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
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