Chemically assisted ion beam etching of submicron features in GaSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120570
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1. Negative differential resistance due to resonant interband tunneling of holes
2. Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
3. New negative differential resistance device based on resonant interband tunneling
4. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
5. InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits
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1. Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces;Journal of Crystal Growth;2008-04
2. Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
4. Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy;MRS Proceedings;2003
5. Fabrication of Nanotips and Microbeams in Antimonide Based Semiconductor Material using Bromine Ion Beam Assisted Etching;MRS Proceedings;2003
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