Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces-Reference-Cited by-同舟云学术

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Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

Published:2008-04 Issue:7-9 Volume:310 Page:1619-1626
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Krishnaswami Kannan,Vangala Shivashankar R.,Dauplaise Helen M.,Allen Lisa P.,Dallas Gordon,Bakken Daniel,Bliss David F.,Goodhue William D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. The physics and technology of gallium antimonide: An emerging optoelectronic material

2. Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au-GaSb schottky diodes

3. Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuum

4. Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb

5. Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurities related micro-defects in GaSb crystal grown by LEC method;Journal of Crystal Growth;2024-03

2. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique;East European Journal of Physics;2023-09-04

3. Impurities Related Micro-Defects in Gasb Crystal Grown by Lec Method;2023

4. Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality;Frontiers in Materials;2021-10-18

5. Investigation of photoelectrochemical-oxidized p-GaSb films;Applied Physics Letters;2012-12-17

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