Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au-GaSb schottky diodes
Author:
Publisher
Wiley
Subject
General Chemical Engineering,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Molecular beam epitaxy of GaSb and InGaSb
2. Molecular beam epitaxy of In0.23Ga0.77Sb Grown on GaAs and GaSb substrates and the fabrication of planar In0.23Ga0.77Sb transferred electron devices
3. The GaAlAsSb quaternary and GaAlSb ternary alloys and their application to infrared detectors
4. GaSb Schottky diodes for infrared detectors
5. GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source
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1. Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces;Journal of Crystal Growth;2008-04
2. Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuum;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
3. Common n- and p-Contact for Serial Wiring of Quaternary Antimonide Monolithic Interconnected Module Thermophotovoltaic Devices;Journal of The Electrochemical Society;2002
4. In-situ reflectance monitoring of GaSb substrate oxide desorption;Journal of Crystal Growth;2001-05
5. Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb;Materials Science and Engineering: B;1997-02
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