Molecular beam epitaxy of In0.23Ga0.77Sb Grown on GaAs and GaSb substrates and the fabrication of planar In0.23Ga0.77Sb transferred electron devices-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of In0.23Ga0.77Sb Grown on GaAs and GaSb substrates and the fabrication of planar In0.23Ga0.77Sb transferred electron devices

Published:1993-12-16 Issue:2 Volume:140 Page:481-490
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kodama M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Velocity∕field characteristic of GaxIn1−xSb calculated by the Monte Carlo method

2. Gunn effects in InxGa1−xSb (0 ≤ x ≤ 0.16)

3. Coherent Gunn oscillations in Gaxin1−xSb

4. Molecular beam epitaxy of GaSb and InGaSb

5. Contact Resistance and Contact Resistivity

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy;Semiconductor Science and Technology;1996-08-01

2. InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony;Journal of Electronic Materials;1995-11

3. Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au-GaSb schottky diodes;Advanced Materials for Optics and Electronics;1994-09

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